The reverse saturation current in junction diode is independent of A- Temperature B- junction area C- potential barrier D- doping of 'P' and 'N' type region
Question
The reverse saturation current in junction diode is independent of A- Temperature B- junction area C- potential barrier D- doping of 'P' and 'N' type region
Solution 1
The reverse saturation current in a junction diode is dependent on all the options mentioned above.
A- Temperature: The reverse saturation current doubles for every 10°C rise in temperature. So, it is not independent of temperature.
B- Junction Area: The reverse saturation current is directly proportional to the junction area. Larger the junction area, larger will be the reverse saturation current. So, it is not independent of junction area.
C- Potential Barrier: The reverse saturation current is also dependent on the potential barrier. Higher the barrier potential, lower is the reverse saturation current. So, it is not independent of potential barrier.
D- Doping of 'P' and 'N' type region: The reverse saturation current is also dependent on the doping levels of the 'P' and 'N' type regions. Higher the doping level, lower is the reverse saturation current. So, it is not independent of the doping of 'P' and 'N' type region.
Solution 2
The reverse saturation current in a junction diode is dependent on:
A- Temperature: The reverse saturation current doubles for every 10°C rise in temperature. So, it is not independent of temperature.
B- Junction Area: The reverse saturation current is directly proportional to the junction area. Larger the junction area, larger will be the reverse saturation current. So, it is not independent of junction area.
C- Potential Barrier: The reverse saturation current is not significantly affected by the potential barrier. So, it can be considered as independent of the potential barrier.
D- Doping of 'P' and 'N' type region: The reverse saturation current is dependent on the doping levels of the 'P' and 'N' type regions. Higher the doping level, lower will be the reverse saturation current. So, it is not independent of the doping of 'P' and 'N' type region.
Therefore, the reverse saturation current in a junction diode is independent of the potential barrier (Option C).
Similar Questions
The reverse saturation current in PN junction diode is maily due to
Briefly explain conduction of a p-n junction diode in forward bias mode.a.Dark currents, friction, humidity and aging, enhances p and n type regions in the neutral region/depletion region until when it overcomes the potential barrier for the p-n junction to start conducting.b.Increase in pressure enhances p and n type regions in the neutral region/depletion region until when it overcomes the potential barrier for the p-n junction to start conducting.c.Increase in temperature enhances p and n type regions in the neutral region/depletion region until when it overcomes the potential barrier for the p-n junction to start conducting.d.External field enhances p and n type regions in the neutral region/depletion region until when it overcomes the potential barrier for the p-n junction to start conducting.
In a reverse-biased P-N junction diode, the current is primarily due to:Options :Electron flow from N to P regionHole flow from P to N regionMajority charge carriersMinority charge carriers
Give the forward biased and reverse biased characteristics of a p-n junction diode.
The depletion region in a semiconductor p-n junction diode has Options :Electrons and holesPositive and negative ions on either sideNeither electrons nor ionsNo holes
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