When a PN junction is reverse biasedOptions :Holes and electrons tend to concentrate towards the junctionThe barrier tends to break downHoles and electrons tend to move away from the junctionNone of these
Question
When a PN junction is reverse biasedOptions :Holes and electrons tend to concentrate towards the junctionThe barrier tends to break downHoles and electrons tend to move away from the junctionNone of these
Solution
When a PN junction is reverse biased, the holes and electrons tend to move away from the junction.
Here's a step-by-step explanation:
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In a PN junction, the P side has an abundance of holes, while the N side has an abundance of electrons.
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When the PN junction is reverse biased, it means that the P side is connected to the negative terminal of the power supply and the N side is connected to the positive terminal.
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This causes the holes in the P side to be attracted to the negative terminal and the electrons in the N side to be attracted to the positive terminal.
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As a result, the holes and electrons move away from the junction, increasing the width of the depletion region (the region around the junction that is depleted of charge carriers).
So, the correct option is: "Holes and electrons tend to move away from the junction".
Similar Questions
Which of the following is a characteristic of a reverse-biased p-n junction?a.Very narrow depletion regionb.Almost no currentc.Large current flowd.Very low resistance
In semiconductor physics, what phenomenon leads to the creation of a depletion region in a PN junction?Recombination of charge carriersDiffusion of minority carriersDrift of majority carriersInjection of minority carriers
In a reverse-biased PN junction, the current through the junction increases abruptly atOptions :0.5 V1.1 V0.72 VBreakdown voltage
The depletion region in a semiconductor p-n junction diode has Options :Electrons and holesPositive and negative ions on either sideNeither electrons nor ionsNo holes
The dominant mechanism for motion of charge carriers in forward and reverse biased silicon P-N junctions are :Drift in forward bias, diffusion in reverse biasDiffusion in forward bias, drift in reverse biasDiffusion in both forward and reverse biasDrift in both forward and reverse bias
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